Si and Ge based metallic core/shell nanowires for nano-electronic device applications

Si/Ge Nanowires as High Performance FETs

Semiconductor nanowires are potential alternatives to conventional planar (MOSFETs). Nanowire FETs (NWFETs) have a unique electronic structure which we can try and exploit. Carriers in nanowires have longer mean free paths and are subjected to reduced scattering thanks to onedimensional quantum confinement effects. Unlike carbon-nanotubes (CNTs), the electronic properties of nanowires are highl...

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...

Structure, strain and stability of ultra-thin Ge layers in Si/Ge/Si axial heterojunction nanowires

The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...

17.6 Si-Ge-Sn based Compound Semiconductors for Photonic Applications

Si-Ge-Sn alloys can achieve bandgaps in the 1eV range and can facilitate the integration of III-V materials with both Ge and Si substrates. The development and current status of Si-Ge-Sn epilayer growth at Translucent is presented. The main aims of this work are the development of infrared absorbers with bandgaps below that of Ge for infrared detectors, 1 eV semiconductor materials for photovol...

First Principles Study of Si/Ge Core-Shell Nanowires - Structural and Electronic Properties